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This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600¿ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10¿7¿¿cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.
| Autorius: | Zhiqiang Li |
| Serija: | Springer Theses |
| Leidėjas: | Springer Berlin Heidelberg |
| Išleidimo metai: | 2018 |
| Knygos puslapių skaičius: | 80 |
| ISBN-10: | 3662570262 |
| ISBN-13: | 9783662570265 |
| Formatas: | 235 x 155 x 5 mm. Knyga minkštu viršeliu |
| Kalba: | Anglų |
Parašykite atsiliepimą apie „The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices“
