Atnaujintas knygų su minimaliais defektais pasiūlymas! Naršykite ČIA >>
As a result of aggressive downscaling, short-channel effects (SCEs) become a major threat for future downscaling especially in the sub-100nm region. In order to extend the International Technology Road-map for Semiconductors (ITRS) road-map beyond 100nm, Double-Gate (DG) MOSFET evinces himself as a major promising candidate due to its higher scaling capability. In this book, modelling using a pseudo- two-dimensional (2D) analysis was presented to explore the effect of scaling especially for subthreshold characteristics of short-channel DG and conventional single gate MOSFET.
| Autorius: | Angsuman Sarkar |
| Leidėjas: | LAP LAMBERT Academic Publishing |
| Išleidimo metai: | 2014 |
| Knygos puslapių skaičius: | 84 |
| ISBN-10: | 3659126098 |
| ISBN-13: | 9783659126093 |
| Formatas: | 220 x 150 x 6 mm. Knyga minkštu viršeliu |
| Kalba: | Anglų |
Parašykite atsiliepimą apie „Subthreshold Surface Potential Model for Short-Channel Mosfet: Using Pseudo 2d Analysis“
