The conjunction of charge manipulation in the semiconductor with the electron spin could lead to a whole new era in information technology, called semiconductor spintronics. In a spinFET device the conventional source/drain contacts are replaced by ferromagnetic (FM) electrodes, injecting and detecting spin-polarized current in silicon. The main advantage of this approach is the merge of information processing and storage in one device, employing a magneto-current effect that depends on the relative magnetization of the injector and detector electrode. The use of silicon as a host material for spin polarized current features a big advantage: its outstanding spin lifetime. The so-called conductivity mismatch between the FM contact and silicon is identified as major obstacle for spin injection, where the diodes' resistance area product has to match a narrow resistance window. In the present work the structural, electrical and magnetic properties of ferromagnetic Schottky diodes and MgO-based tunneling diodes have been investigated, employing CoFe/NiFe, NiFe and CoFeB ferromagnetic electrodes, different silicon doping densities and different post-deposition annealing conditions.
| Autorius: | Thomas Uhrmann |
| Leidėjas: | Südwestdeutscher Verlag für Hochschulschriften AG Co. KG |
| Išleidimo metai: | 2015 |
| Knygos puslapių skaičius: | 168 |
| ISBN-10: | 3838117905 |
| ISBN-13: | 9783838117904 |
| Formatas: | 220 x 150 x 11 mm. Knyga minkštu viršeliu |
| Kalba: | Anglų |
Parašykite atsiliepimą apie „Spin Injection in Silicon: Evaluation of sputter-deposited MgO-based tunneling diodes for silicon spintronics“
