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Research on the Radiation Effects and Compact Model of SiGe HBT

-22% su kodu: BOOKS
132,12 
Įprasta kaina: 169,38 
-22% su kodu: BOOKS
Kupono kodas: BOOKS
Akcija baigiasi: 2025-03-09
-22% su kodu: BOOKS
132,12 
Įprasta kaina: 169,38 
-22% su kodu: BOOKS
Kupono kodas: BOOKS
Akcija baigiasi: 2025-03-09
-22% su kodu: BOOKS
2025-03-31 132.12 InStock
Nemokamas pristatymas į paštomatus per 11-15 darbo dienų užsakymams nuo 10,00 

Knygos aprašymas

This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.

Informacija

Autorius: Yabin Sun
Serija: Springer Theses
Leidėjas: Springer Nature Singapore
Išleidimo metai: 2017
Knygos puslapių skaičius: 192
ISBN-10: 9811046115
ISBN-13: 9789811046117
Formatas: 241 x 160 x 17 mm. Knyga kietu viršeliu
Kalba: Anglų

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