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This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.
| Autorius: | Ghanshyam Singh, Viranjay M. Srivastava, |
| Serija: | Analog Circuits and Signal Processing |
| Leidėjas: | Springer Nature Switzerland |
| Išleidimo metai: | 2016 |
| Knygos puslapių skaičius: | 216 |
| ISBN-10: | 3319345354 |
| ISBN-13: | 9783319345352 |
| Formatas: | 235 x 155 x 12 mm. Knyga minkštu viršeliu |
| Kalba: | Anglų |
Parašykite atsiliepimą apie „MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch“
