Atnaujintas knygų su minimaliais defektais pasiūlymas! Naršykite ČIA >>

0 Mėgstami
0Krepšelis

Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond

-22% su kodu: BOOKS
132,12 
Įprasta kaina: 169,38 
-22% su kodu: BOOKS
Kupono kodas: BOOKS
Akcija baigiasi: 2025-03-10
-22% su kodu: BOOKS
132,12 
Įprasta kaina: 169,38 
-22% su kodu: BOOKS
Kupono kodas: BOOKS
Akcija baigiasi: 2025-03-10
-22% su kodu: BOOKS
2025-03-31 132.12 InStock
Nemokamas pristatymas į paštomatus per 11-15 darbo dienų užsakymams nuo 20,00 

Knygos aprašymas

This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling.

As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node.
The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its patterndependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.

Informacija

Autorius: Guilei Wang
Serija: Springer Theses
Leidėjas: Springer Nature Singapore
Išleidimo metai: 2019
Knygos puslapių skaičius: 132
ISBN-10: 9811500452
ISBN-13: 9789811500459
Formatas: 241 x 160 x 13 mm. Knyga kietu viršeliu
Kalba: Anglų

Pirkėjų atsiliepimai

Parašykite atsiliepimą apie „Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond“

Būtina įvertinti prekę

Goodreads reviews for „Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond“