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Novel materials with high-dielectric(k) constants are rapidly gaining attention for their application as gate insulator for future MOS transistors. This book provides the basic principles underlying chemical vapor deposition (CVD) of hafnium oxide and hafnium silicate thin films for high-k application. In addition to the deposition fundamentals, the discussions in the book provide valuable insights to various chemical and physical characterization techniques that can be applied to thin films in general. This easy-to-understand and well- illustrated text is designed for both beginners as well as advanced researchers with a good introduction to the subject of high-k thin films.
| Autorius: | Harish Bhandari |
| Leidėjas: | LAP LAMBERT Academic Publishing |
| Išleidimo metai: | 2010 |
| Knygos puslapių skaičius: | 232 |
| ISBN-10: | 3838333888 |
| ISBN-13: | 9783838333885 |
| Formatas: | 220 x 150 x 14 mm. Knyga minkštu viršeliu |
| Kalba: | Anglų |
Parašykite atsiliepimą apie „Hafnium Oxide And Hafnium Silicate For High-k Application: Characterization of Hafnium Based Oxide Thin Films Deposited by CVD & Plasma-CVD For High-k Application in Transistors“
