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The emergence of highly efficient short-wavelength laser diodes based on the III-V compound semiconductor GaN has not only enabled high-density optical data storage, but is also expected to revolutionize display applications. Moreover, a variety of scientific applications in biophotonics, materials research and quantum optics can benefit from these versatile and cost-efficient laser light sources in the near-UV to green spectral range. This thesis describes the device physics of GaN-based laser diodes, together with recent efforts to achieve longer emission wavelengths and short-pulse emission. Experimental and theoretical approaches are employed to address the individual device properties and optimize the laser diodes toward the requirements of specific applications.
| Autorius: | Wolfgang G. Scheibenzuber |
| Serija: | Springer Theses |
| Leidėjas: | Springer Berlin Heidelberg |
| Išleidimo metai: | 2014 |
| Knygos puslapių skaičius: | 112 |
| ISBN-10: | 3642435483 |
| ISBN-13: | 9783642435485 |
| Formatas: | 235 x 155 x 7 mm. Knyga minkštu viršeliu |
| Kalba: | Anglų |
Parašykite atsiliepimą apie „GaN-Based Laser Diodes: Towards Longer Wavelengths and Short Pulses“
