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When the chip size of light emitting diodes (LEDs) and the input power become larger, current spreading in the active layer will obviously affect the optical, electrical, and thermal packaging performances of the LED chip. To further understand the current spreading behavior in the active layer, a three-dimensional numerical simulation is developed to analyze the electrical characteristic and current distribution of a GaN LEDs device. The results and trends found could serve as useful references for researchers focusing on the design of an LED chip.
| Autorius: | Gwo-Jiun Sheu, Farn-Shiun Hwu, Jyh-Chen Chen, |
| Leidėjas: | LAP LAMBERT Academic Publishing |
| Išleidimo metai: | 2010 |
| Knygos puslapių skaičius: | 92 |
| ISBN-10: | 3838305841 |
| ISBN-13: | 9783838305844 |
| Formatas: | 220 x 150 x 7 mm. Knyga minkštu viršeliu |
| Kalba: | Anglų |
Parašykite atsiliepimą apie „Electrical Simulation in the GaN Light-Emitting Diode Dies: Current Spreading Analysis in the Active Layer of LEDs Dies“
