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The misfit dislocations and strain relaxation play a critical role in growth of high quality Sb-based III-V hetero-structures, which is of great interest for applications in the near- and far-infrared optoelectronics and ultra-high speed low-power consumption electronics. The aim of this work is to carry out an extensive TEM investigation of Sb-based III-V layer on the GaAs (or GaP) substrates and especially try to point out the relationship between the misfit dislocations types, strain relaxation, and the misfit dislocation formation mechanism. This book includes an introduction of this research and the state of art of the MBE epitaxy of GaSb; the facilities as well as the theoretical tools used to investigate the misfit dislocation and strain relaxation; growth optimization of highly lattice mismatched GaSb on GaAs as well as GaP substrate; and experimental & theoretical work to investigate the misfit dislocation formation mechanism. The results presented in this book will be useful for those working in the field of epitaxy of highly lattice mismatched III-V semiconductors.
| Autorius: | Yi Wang |
| Leidėjas: | LAP LAMBERT Academic Publishing |
| Išleidimo metai: | 2012 |
| Knygos puslapių skaičius: | 132 |
| ISBN-10: | 3659222852 |
| ISBN-13: | 9783659222856 |
| Formatas: | 220 x 150 x 8 mm. Knyga minkštu viršeliu |
| Kalba: | Anglų |
Parašykite atsiliepimą apie „Dislocation and strain relaxation at III-V semiconductor interface: A TEM and theoretical study“
