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Computational calculation of energy loss and damage profiles when implanted by gallium and arsenic ions independently on amorphous germanium during ion implantation had been carried out. The required energies for doping of gallium ion and arsenic ion on germanium, in order to obtain maximum damage at 600 Å, were calculated using SRIM. These energies when implanted independently on germanium causes the production of germanium recoils, vacancy-interstitial pairs, and phonons during the collision process. For 130 keV gallium ion, the energy used for ionization, phonon production and vacancies creation are 37.713 keV (29.01%), 90.006 keV (64.29%) and 8.71 keV (6.7%) respectively, whereas, for 140 keV arsenic ion, the energy consumption for ionization, phonon production and vacancies creation are 39.634 keV (28.31%), 90.888 keV (64.92%) and 9.478 keV (6.77%), respectively. The amount of target displacement, replacement collisions and vacancies are also evaluated.
| Autorius: | Karan Giri |
| Leidėjas: | LAP LAMBERT Academic Publishing |
| Išleidimo metai: | 2020 |
| Knygos puslapių skaičius: | 56 |
| ISBN-10: | 6202523816 |
| ISBN-13: | 9786202523813 |
| Formatas: | 220 x 150 x 4 mm. Knyga minkštu viršeliu |
| Kalba: | Anglų |
Parašykite atsiliepimą apie „Computational Method for Energy Calculation: Study of Damage Profiles and Energy Calculation of Gallium and Arsenic Ions During Ion Implantation on Germanium“
