An SOI LDMOS For Better Switch Application: Electron Devices

-15% su kodu: ENG15
48,81 
Įprasta kaina: 57,42 
-15% su kodu: ENG15
Kupono kodas: ENG15
Akcija baigiasi: 2025-03-03
-15% su kodu: ENG15
48,81 
Įprasta kaina: 57,42 
-15% su kodu: ENG15
Kupono kodas: ENG15
Akcija baigiasi: 2025-03-03
-15% su kodu: ENG15
2025-02-28 57.4200 InStock
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Knygos aprašymas

This book is proposed to develop an SOI (Silicon on Insulator) LDMOS in which a drift region of 1-¿m is added to a conventional n-MOS and compare them on various aspects. The drift region utilizes the RESURF effect that is utilized to distribute the electric field into the LDD region. It is found using two dimensional simulations that the addition of a drift region of 1-¿m in LDMOS improves the performance of the device in terms of breakdown-voltage and switching-speed over the conventional MOSFET.

Informacija

Autorius: Arindam Biswas, Arzoo Rafique, Anup Kumar Bhattacharjee,
Leidėjas: LAP LAMBERT Academic Publishing
Išleidimo metai: 2013
Knygos puslapių skaičius: 84
ISBN-10: 3659406759
ISBN-13: 9783659406751
Formatas: 220 x 150 x 6 mm. Knyga minkštu viršeliu
Kalba: Anglų

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