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Although silicon carbide has been used for more than half a century, its potential as a high-temperature, corrosion-resistant semiconductor has only recently begun to be exploited. Both crystalline and amorphous forms of SiC offer several advantages over Si, GaAs, and InP for high-frequency, high-power, and high-speed circuits. This volume contains reports on high-temperature SiC MOSFETs and MESFETs, secondary harmonic generation in SiC, a-SiC emitter heterojunction bipolar transistors, and bulk crystal growth of 6H-SiC. For newcomers to the field it provides an up-to-date review of technological developments in SiC and related materials, while specialists will find here recent references and new insights into materials for high-temperature, high-power, and high-speed circuit applications.
| Serija: | Springer Proceedings in Physics |
| Leidėjas: | Springer Berlin Heidelberg |
| Išleidimo metai: | 2012 |
| Knygos puslapių skaičius: | 216 |
| ISBN-10: | 3642934080 |
| ISBN-13: | 9783642934087 |
| Formatas: | 244 x 170 x 12 mm. Knyga minkštu viršeliu |
| Kalba: | Anglų |
Parašykite atsiliepimą apie „Amorphous and Crystalline Silicon Carbide and Related Materials: Proceedings of the First International Conference, Washington DC, December 10 and 11, 1987“
